electron velocity
英 [ɪˈlektrɒn vəˈlɒsəti]
美 [ɪˈlektrɑːn vəˈlɑːsəti]
网络 电子速度
双语例句
- An important feature of the velocity-field characteristics is a differential negative resistance effect in steady state electron drift velocity.
在平均漂移速度-电场特性中发现了微分负阻效应。 - To vary ( electron velocity) in an electron beam.
调制在一个电子束中改变（电子速率） - The group ⅲ-ⅴ nitride materials are ideal for high power and high temperature devices with their large energy band-gap, high breakdown voltage, high peak electron velocity and high electron sheet density in channels when used in a heterostructure.
GaN是大功率和高温半导体器件的理想化合物半导体材料，具有宽禁带、高击穿电压、异质结沟道中高峰值电子漂移速度和高薄层电子浓度。 - Silicon carbides ( SiC) are a kind of wide bandgap compound semiconductor material which have greater saturated electron drift velocity, higher critical breakdown electric field and higher thermal conductivity.
碳化硅（SiC）是一种具有较大的电子饱和漂移速度、高临界击穿电场和高热导率的宽禁带化合物半导体材料。 - A novel compound collector InGaP/ GaAs heterojunction bipolar transistor is designed based on electron velocity overshoot phenomena.
利用电子运动速度过冲现象，设计出了一种新结构复合收集区InGaP/GaAs异质结双极晶体管。 - Silicon carbide ( SiC) is a promising material for high power, high frequency, high temperature applications because of its excellent properties such as wide band gap, high saturated electron velocity, high electrical breakdown field, high thermal conductivity, thermal stability and so on.
SiC单晶因其宽的禁带宽度、高的电子饱和速度、大的临界击穿场强、高的热导率和热稳定性等特性而成为制作高频、大功率和耐高温器件的理想材料。 - It has been shown that radiation spectrum depends on the initial electron velocity and the intensity of magnetic tiell.
得到辐射频谱分布将是与电子的初速度、磁场强度有关。 - E. the ionization coefficient f of electron collision with neutral moleculars is contributed from both of electron drift velocity and diffusion velocity while it was assumed to be a constant in the previous model.
考虑到电子能量分布，认为电子碰撞电离速率系数f取决于电子的迁移速度VE和扩散速度VD，而不象以前假设电离速率系数f为一常数。 - Some aspects about electron imaging, such as the calibration of electron velocity and the calculation of angular and kinetic energy distribution are also discussed.
还讨论了速度成像方法中速度分布校正和重构三维光电子动能分布及角分布等问题。 - A drift chamber with uniform electric field and measurements of the electron drift velocity
一个均匀电场漂移室和电子漂移速度的测量 - Research on electron initial velocity distribution of practical THERMIONIC CATHODES
实用热阴极的电子初速分布的研究 - AlGaN/ GaN HEMT has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields.
AlGaN/GaNHEMT由于具有击穿电压高、电子漂移速度快和电子浓度大等特点，已被越来越多地应用于高频及大功率领域。 - Thus the assumption commonly used in previous single particle theories that the axial electron velocity is approximately equal to the speed of light no longer remains exact.
后者由于电子未扰轨道纵向速度比较低，已有的单粒子理论中所作的电子纵向速度约等于光速的假设不再成立。 - Electron initial velocity distribution in pulse operation;
脉冲运用下的电子初速分布； - Starting from the relation between electron beam velocity drop and electro-nic efficiency, this paper suggests a handy and reliable method of design for the velocity transition section of resynchronization of helix traveling wave tube, based on an experimental scaling tube.
本文从注速跌落与电子效率的相互关系出发，以实验定标管为依据，提出了一个设计螺旋线行波管再同步相速跳变段的简便而可靠的新方法； - The quasilinear differential equations are solved by finite difference method with non-equidistant scheme. The evolution of the runaway electron distribution function and wave energy density are obtained in interval of electron parallel velocity.
本文用非等距有限差分法，求解了准线性微分方程组，获得了在电子平行速度区间，逃逸电子分布函数和波能密度的二维演化图象。 - As an important semiconductor material, AlN has a bright future in the microelectronic and optoelectronic fields with its unique combination of properties such as wide bandgap, high breakdown field, high thermal conductivity and high saturated electron drift velocity.
AlN是一种重要的半导体材料，由于具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等优越的特性，在微电子和光电子领域具有广泛的应用前景。 - The effects of the cathode surface electric-field and electron initial velocity on the electrode shape and characteristics of electron beam are calculated and analysed.
计算分析了阴极表面电场与电子初（？）对电极形状和电子注特性的影响。 - Generally, the velocity of alpha particles produced by fusion is much greater than ion thermal velocity, but much smaller than electron thermal velocity.
聚变产生的高能α粒子的速度通常远大于本底离子的热速度而远小于本底电子的热速度。 - The flat-topped type is used for the electron velocity distributions.
电子速度分布函数采用平顶形式。 - SiC materials with a high electric breakdown field, a high saturated electron drift velocity and a high thermal conductivity, have a great potential in power devices.
SiC材料具有高电流击穿场、高饱和电子漂移速率、高热导率等特性，使得SiC材料在功率器件领域具有巨大的潜力。 - Due to their superior intrinsic properties such as the wide band gap, high electron saturation velocity, high thermal conductivity and physical and chemical stability, group III nitrides is suitable for application in high-speed, high-temperature and high-power electronic devices.
这些半导体材料由于具有能隙宽、电子饱和速率高、导热性能好以及物理和化学性质稳定等优良的内在特性，因此适合于制作高速、高温和大功率的电子器件。 - In addition, the epitaxy layer of this structure is easy to grow and the electron velocity of collector is high. 3.
同时，该结构具有外延层结构简单，集电区漂移速率高等优点。 - Silicon Carbide is being intensely pursued around the world for high temperature, high power, high frequency and high radiation applications because of its wide bandgap, high electric field strength, high saturation electron velocity and high thermal conductivity.
第三代半导体材料碳化硅（SiC）由于具有宽带隙、高临界击穿电场、高热导率以及高载流子饱和漂移速度等优异特性，而广泛应用于高温、大功率、高频、抗辐射等领域。 - By comparison with the experimental data, each electron drift velocity is quite different depending on the measurement methods. So we have the conclusion that proper measurement is essential for simulation.
通过与实验数据对比发现，各个电子漂移速度根据测量方法的不同有较大差异，选择正确的测量方法至关重要。 - Silicon carbide ( SiC) has great potential application of high temperature, high frequency, high power and irradiation domains for its superior properties, such as wide bandgap, high conductivity, high saturated electron velocity and high critical breakdown field.
SiC材料具有宽禁带、高临界击穿电场、高热导率、高载流子饱和漂移速度等优良特性，这些特性决定了它在高温、大功率、高频和抗辐照等领域的有着广泛的应用前景。 - GaN has larger bandgap, breakdown voltage, electron saturation velocity which made it have great potential to be applied for high temperature, high power and high frequency electronics compared to traditional Si.
GaN作为第三代半导体，和传统的Si相比具有更大的禁带宽度，更高击穿电场、更高的电子饱和速度等优点，使得其在高温，高频，大功率等场合具有令人瞩目的应用前景。 - Meanwhile the effect of the initial electron velocity on the movement track is also studied.
同时研究了电子的初始出发速度对电子运动轨迹的影响。